FDLL485B【PDF 1/4 页】DIODE 180V 200MA LL34

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FDLL485B — High Conductance, Low Leakage Diode

? 1997 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FDLL485B Rev. 1.1.0 1

April 2013

FDLL485B

High Conductance, Low Leakage Diode

Absolute Maximum Ratings(1)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA

= 25°C unless otherwise noted.

Note:

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Electrical Characteristics

Values are at TA

= 25°C unless otherwise noted.

Symbol Parameter Value Units

WIV

Working Inverse Voltage 180 V

Average Rectified Current 200 mA

DC Forward Current 500 mA

Recurrent Peak Forward Current 600 mA

IFSM

Non-repetitive Peak Forward Current

Pulse Width = 1.0 s 1.0 A

Pulse Width = 1.0 μs4.0A

TSTG

Storage Temperature Range -65 to +200

°C

Operating Junction Temperature -65 to +200

°C

Symbol Parameter Value Units

Power Dissipation 500 mW

Linear Derating Factor from TA

= 25

°C3.33mW/°C

RθJA

Thermal Resistance, Junction to Ambient 350

°C/W

Symbol Parameter Conditions Min. Max. Units

Breakdown Voltage IR

= 100

μA200 V

Forward Voltage IF

= 100 mA 1.0 V

Reverse Leakage

= 180 V 25 nA

= 180 V, T

= 150

°C5.0μA

CTTotal Capacitance VR

= 0, f = 1.0 MHz 6.0 pF

Cathode Band

SOD80

Description

A general purpose diode that couples high forward con-

ductance fast swiching speed and high blocking voltages

in a glass leadless LL-34 surface mount package. Place-

ment of the expansion gap has no relationship to the

location of the cathode terminal which is indicated by the

first color band.

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